Mechanical and structural properties of RF magnetron
Jan 13 2012 · Mechanical and structural properties of RF magnetron sputter-deposited silicon carbide films for MEMS applications. Atul Vir Singh 1 Sudhir Chandra 1 3 Sushil Kumar 2 and G Bose 1 4. Published 13 January 2012 • 2012 IOP Publishing Ltd Journal of Micromechanics and Microengineering Volume 22 Number 2
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Mechanical Properties of Silicon Carbide Nanowires Effect
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs) via in situ tensile tests inside scanning electron microscopy using a microelectromechanical system. The NWs are synthesized using the vapor–liquid–solid process with growth direction of 111 . They consist of three types of structures pure face-centered cubic (3C) structure 3C structure
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Mechanical and structural properties of in-situ doped
Sep 28 2001 · In this paper we report on mechanical and structural properties of in-situ n- and p-type PECVD Silicon Carbide (SiC) thin films for post-process surface micromachining. The effect of the doping on the film properties is investigated and compared to undoped layers. A clear increase in deposition rate is observed when adding the doping gas.
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High Temperature Mechanical Properties of CVD-SiC Thin Films
Silicon carbide (SiC) coatings were fabricated using a chemical vapor deposition (CVD) process onto a graphite substrate at different deposition temperatures. The mechanical properties such as hardness modulus and creep properties from room temperature to 500°C were investigated using nanoindentation techniques. The SiC coatings deposited at 1300°C exhibited a small grain size (0.2 0.4
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"Mechanical Properties of Silicon Carbide (SiC) Thin Films
Silicon Carbide (SiC) fulfills such requirements with a variety of applications in high temperature and MEMS devices. A detailed study of SiC thin films mechanical properties was
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The optical properties of silicon carbide thin films
Jun 19 2019 · Silicon carbide (SiC) is a wide band gap semiconductor alloy which is known as an industrial material and a suitable candidate for application in electronic and optoelectronic devices such as transistors solar cells and light emitting diodes 1–3 .Although the optical band gap of crystalline SiC thin film is reported to be about 2.4 eV the optical band gap of hydrogenated amorphous SiC
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Mechanical characterization between room temperature and
Maruthoor et al. " Mechanical characterization of polycrystalline and amorphous silicon carbide thin films using bulge test " J. Microelectromech. Syst. Syst. 22 (1) 140- 146 (2013).
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Mechanical characterization of SiC film at high
This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500degC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a free-standing specimen on an "on-chip" tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range.
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Characterization of SiC Thin Films Deposited by HiPIMS
Silicon carbide (SiC) has properties such as chemical thermal and electrical stabilities that allow its use in harsh environments1. SiC thin films have a wide range industrial applications such as in coating tools2 and in micro-electro-mechanical systems (MEMS) 3-5. For applications in MEMS the piezoresistive properties of SiC generate great
Get Price(PDF) Elastic properties of beta-SiC films by Brillouin
For such films surface micromachining is not possible so that poly-SiC has to be grown on an appropriate sacial layer on silicon.To better understand the intrinsic thermomechanical properties of SiC thin films we have studied in detail some mechanical and structural aspects of two cubic 3C-SiC films monocrystalline and ͗111͘ fiber
Get PriceMechanical characterization of SiC film at high
This paper reports the mechanical properties of silicon carbide (SiC) films at elevated temperatures up to 500degC. Poly-crystalline SiC film (poly-SiC) was deposited by LPCVD on a silicon wafer and patterned into a free-standing specimen on an "on-chip" tensile test device. The fracture strength of poly-SiC films showed little temperature dependence over the test temperature range.
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Mechanical properties of epitaxial 3C silicon carbide thin
Aug 08 2005 · Abstract Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of strength and elastic modulus. Samples were fabricated using both micromolding and reactive ion etching (RIE) processes to pattern the 3C-SiC films. All specimens were on the (100) plane with a . 110> tensile direction.
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Mechanical properties of epitaxial 3C silicon carbide thin
Aug 08 2005 · Abstract Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of strength and elastic modulus. Samples were fabricated using both micromolding and reactive ion etching (RIE) processes to pattern the 3C-SiC films. All specimens were on the (100) plane with a . 110> tensile direction.
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Study on Mechanical Properties of Single-Crystal Silicon
Abstract In order to clarify the mechanical properties of single-crystal silicon carbide (SiC) nanoindentation was performed on a 4H-SiC wafer. The change of hardness with the angle between the wafer orientation flat and the indenter edge the maximum load and the loading rate were investigated.
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Mechanical Properties of Thin Film Silicon Carbide MRS
Mar 15 2011 · Silicon carbide is a very attractive material for a variety of applications. Originally considered for use in high power and high temperature electronics because of its large bandgap designers of MEMS are now considering use of silicon carbide because of its stability at high temperatures resistance to corrosives high stiffness and radiation resistance.
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Study on Mechanical Properties of Single-Crystal Silicon
Abstract In order to clarify the mechanical properties of single-crystal silicon carbide (SiC) nanoindentation was performed on a 4H-SiC wafer. The change of hardness with the angle between the wafer orientation flat and the indenter edge the maximum load and the loading rate were investigated.
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Adhesion structure and mechanical properties of Cr
article osti_ title = Adhesion structure and mechanical properties of Cr HiPIMS and cathodic arc deposited coatings on SiC author = Mouche Peter A. and Koyanagi Takaaki and Patel Deep and Kato Yutai abstractNote = Chromium deposited by high-power impulse magnetron sputtering (HIPIMS) versus cathodic arc (CA) processes exhibits very different mechanical properties.
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Silicon carbideWikipedia
Silicon carbide (SiC) also known as carborundum / k ɑːr b ə ˈ r ʌ n d əm / is a semiconductor containing silicon and carbon.It occurs in nature as the extremely rare mineral moissanite.Synthetic SiC powder has been mass-produced since 1893 for use as an abrasive.Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications
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Silicon Carbide CoorsTek
CoorsTek UltraClean™ Siliconized Silicon Carbide (Si SiC) is a unique silicon carbide in which metallic silicon (Si) infiltrates spaces between the grains ─ allowing extremely tight tolerances even for large parts. Siliconized silicon carbide is ideal for high-stress applications which require great mechanical strength along with excellent
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Mechanical Properties of Epitaxial 3C Silicon Carbide Thin
SiC is a CMOS compatible material 7 8 with several favorable properties such as a wide band-gap absence of two photon absorption at telecom wavelengths high chemical resistance in harsh
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Experimental and FEM based investigation of the influence
influence of deposition temperature on the mechanical properties of SiC coatings. Instrumented indentation also called nanoindentation is a powerful tool to characterize coatings and thin films since the sample volume can be kept quite small. However if the standardized Oliver and Phar method
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Photonic crystal cavities in cubic (3C) polytype silicon
photonic crystal cavities from cubic (3C) thin films (thickness 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band with wavelengths from 1.251.6 μm. Finally we discuss possible applications
Get PriceMechanical properties of epitaxial 3C silicon carbide thin
Aug 08 2005 · Abstract Microscale tensile specimens of epitaxial 3C silicon carbide (3C-SiC) thin films were fabricated on Si substrates and tested to provide measurements of strength and elastic modulus. Samples were fabricated using both micromolding and reactive ion etching (RIE) processes to pattern the 3C-SiC films. All specimens were on the (100) plane with a . 110> tensile direction.
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Investigation of Silicon carbide based thin films for
silicon carbide (SiC) because of its lower band gap (2.5 eV) as compared to SiO 2 (9eV) and Si3N4 (5.3eV) in order to favor better electrical conductivity. This paper reports the initial works carried out on silicon carbide based thin films where in optical and structural properties of the film
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Mechanical Properties of Epitaxial 3C Silicon Carbide Thin
SiC is a CMOS compatible material 7 8 with several favorable properties such as a wide band-gap absence of two photon absorption at telecom wavelengths high chemical resistance in harsh
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Mechanical properties of amorphous silicon carbonitride
Nov 21 2014 · The mechanical properties of amorphous silicon carbonitride (a-SiC x N y ) films with various nitrogen content (y = 0–40 at. ) were investigated in situ at elevated temperatures up to 650 °C in inert atmosphere. A SiC film was measured also at 700 °C in air. The hardness and elastic modulus were evaluated using instrumented nanoindentation with thermally stable cubic boron nitride
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The optical properties of silicon carbide thin films
Jun 19 2019 · Silicon carbide (SiC) is a wide band gap semiconductor alloy which is known as an industrial material and a suitable candidate for application in electronic and optoelectronic devices such as transistors solar cells and light emitting diodes 1–3 .Although the optical band gap of crystalline SiC thin film is reported to be about 2.4 eV the optical band gap of hydrogenated amorphous SiC
Get PriceSTRUCTURAL PROPERTIES AND OPTICAL MODELLING OF SiC
Amorphous silicon carbide (a-SiC) is a versatile material due to its interesting mechanical chemical and optical properties that make it a candidate for application in solar cell technology. As a-SiC stoichiometry can be tuned over a large range consequently is its bandgap. In this thesis amorphous silicon carbide thin films for solar cells
Get PriceSilicon Carbide SiC Material Properties
Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material. Silicon carbide is not attacked by any acids or alkalis or molten salts up to 800°C. In air SiC forms a protective silicon oxide coating at 1200°C and is able to be used up to 1600°C.
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